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AT59C13 Serial E2PROMS 256 × 16/512 × 8
28C64 8K × 8 EEPROM
AT24C16/AT24C164 Serial E2PROMS 2048 × 8
AT27LV1024 EPROM 64K × 16
2864 8K × 8 EEPROM < br /> AT24C01/AT24C01A Serial E2PROMS 128 × 8
AT27LV512R EPROM 64K × 8
27C040 4MB, EPROM
AT27HC641/2R EPROM 8K × 8
HM6264 8K × 8 S-RAM
Application of AT24C02 Serial E2PROMS 256 × 8
AT27C080 an EPROM 1024K × 8
24C16 serial EEPROM (16K, 2048 ×
AT27C010 EPROM 256K × 8
2 817 2K × 8 EEPROM
27C16 2K × 8 EPROM
HM62256 32K × 8 S-RAM
2716 2K × 8 EPROM
24C04 serial EEPROM (4K, 512 ×
AT29C257 FLASH EPROM 32K × 8
AT93C46 Serial E2PROMS 64 × 16/128 × 8
AT93C56/AT93C57 Serial E2PROMS 128 × 16/256 × 8
AT24C04 Serial E2PROMS 512 × 8
24C32 serial EEPROM (32K, 4096 x
AT27C1024 an EPROM 64K x 16
AT29C010 FLASH EPROM 128K × 8
27C32 4K × 8 an EPROM
AT27C512R an EPROM 64K × 8
27256 32K × 8 EPROM
AT27LV256R EPROM 32K × 8
27C256 32K × 8 EPROM
AT29C040 FLASH EPROM 512K × 8
AT27LV010 EPROM 256K × 8
AT29C1024 FLASH EPROM 64K × 16
2732 4K × 8 EPROM
AT27C040 EPROM 512K × 8
AT29C512 FLASH EPROM 64K × 8
AT27C256R EPROM 32K × 8
AT59C11 Serial E2PROMS 64 × 16/128 × 8
93C46 serial EEPROM (1K, 128 × 8 or 64 × 16)
HM628128 128K × 8 S-RAM
27C020 2MB, EPROM,
AT29C256 Flash EPROM 32K × 8
27512 64K × 8 EPROM
27128 16K × 8 EPROM
AT93C66 Serial E2PROMS 256 × 16/512 × 8
27C512 64K × 8 EPROM
2764 8K × the 8 EPRROM
in 2011 – 06 – 08
AT27HC1024 EPROM 64K × 16
AT24C08 Serial E2PROMS 1024 × 8
24C08 serial EEPROM (8K 1024 ×
27C64 8K × 8 EPROM
27C010 1MB, EPROM
93C66 a serial EEPROM (4K, 512 x 8 or 256 × 16)
93C56 serial EEPROM (2K, 256 × 8 or 128 × 16)
AT29C020 Flash EPROM 256K × 8
24C64 serial EEPROM (64K, 8192 ×
24C02 serial EEPROM (2K 256 x
AT27LV040 an EPROM 512K x. 8
HM6116 2K × 8 S-RAM
AT59C22 Serial E2PROMS 128 × 16/256 × 8
2816 2K × 8 EEPROM
AT27HC256R EPROM 32K × 8

DB 0A0H, 10H, 01H, 02H, 03H, 04H, 05H, 06H
STAR: SETB SDA
the CLR the SDA; the SDA set to zero, ready to send to stop the Signal
the DEPR: MOV P3, # 0FFH
the NOP
the SCL the BIT P3.7 -; in many places the definition of the 24C02 serial clock line
the END
SETB SCL
program called DELAY subroutine (only two NOP instruction), which is in order to meet the requirements of the data transfer rate on the I2C bus to read and write only when the data of the SDA data line to stabilize (ie, the SCL line issued a positive pulse). In addition, when the last data byte is read, set transponder signal is “1″ indicates a read operation is nearing completion.
SETB SCL
by ACALL and the SUBS
by ACALL and the SUBS
; (R4) =-chip byte address
of AIN: MOV A,, @ of R1
by ACALL and the DELAY < br />;; R3 = 10,100,001 (command 1010 devices 3 address read / write device address of a chip, 000)
the NOP
, the NOP MOV SDA,
; (R7) = Continuous read the number of bytes
by ACALL and the DELAY SETB the SDA
of RET
by ACALL and the DELAY; delay requirements to meet the transfer rate
START: LCALL is not blocked STAR; call
the SDA MOV, C
, the CLR the SCL, the NOP
by ACALL and the DELAY
MOV A, R4; send-chip byte address
MOV A, R3,; send device address
XEPR: MOV P3, # 0FFH
the NOP
RET
LCALL is not blocked the SDATA by ACALL and the DELAY
RET
SUBR: MOV R0, # 08H; to accept single-byte subroutine
the SUBS: MOV R0, # 08H; send single-byte subroutine
by ACALL and DELAY
LOW: the CLR the SDA; Otherwise, set A =
MOV @ R1, A
SETB SCL
MOV A, R4; Feeding byte address
; write the serial E2PROM subroutine XEPR
the NOP
MOV A, R3,; send device address
the NOP
; (R1) = To read data stored address pointer
SETB the SCL
RET
SETB the SDA
the NOP
/> the NOP Application of AT24C02 of 1,2,3-foot three address lines used to determine the hardware address of the chip directly to ground (test board is only one device); 8 feet and 4 feet respectively positive and negative power supply. 5 feet SDA serial data input / output, serial transmission of data through the bi-directional I2C bus, the SDA and SCL needs and each received a 5.1K resistor between the power pull. 7 feet for the WP write protection side, the ground to allow the chip to perform read and write operations. Power supply side is not allowed to write to the device.
the NOP
the CLR the SDA by ACALL and the SUBS; tune to send single-byte subroutine INC. R1
MOV C, SDA
STOP: CLR the SDA
LCALL is not blocked the STOP; call the stop subroutine
CJNE R7, # 01H, the LOW
the NOP
by ACALL and the SUBS
; read the serial E2PROM subroutine the DEPR
the NOP
RET
the CLR PSDA; recurrence began DJNZ signal
of R0 LOOP2
; (R7) = continuous write the number of bytes n
SETB the SDA; send stop signal

the NOP
more than AT24C02 single-byte read and write operating procedures, beginners can learn to read and write the entire page can skillfully use.
the NOP
; address 0100H, the following eight data is written the 24C02 01H, led by the address unit to the assembler directly in the experiments on-board experiments.
LCALL is not blocked ACK
; (R1) = To write data storage address pointer
the CLR the SDA; hair began to signal
the NOP
by ACALL and the SUBS
the NOP
the NOP
, SCL
by ACALL and the DELAY
RET, the CLR
LOOP0: RLC A,
the NOP
SETOK: by ACALL and the DELAY
read and write subroutines are as follows: the
the NOP
AJMP, SETOK-
SETB SCL;, stop signal
LOOP: CLR SCL

layman Figure:
DJNZ you R7, the MORE
by ACALL and SUBS; tune to send single-byte subroutine
by ACALL and DELAY
the NOP
by ACALL and the DELAY
SETB SCL the NOP
the NOP < br /> INC. R1
ACK: SETB SDA
24C02 in an on-chip address register. After each write or read a data byte, the address register is automatically 1 to read and write the next storage unit. All bytes are read a single mode of operation. In order to reduce the total write time, an operation can be written to up to eight bytes of data.
MOV DPTR, # register 0100H.; defines the source data location,
CLR the SCL
the NOP
the SDA, the BIT P3.6; definition of the 24C02 serial data line
by ACALL and the DELAY < br /> MOV P3, # 0FFH
JC REP; sentence answer to whether, until it is waiting for
SETB SCL
2010 07 29
CLR the SCL
REP: MOV C, SDA
RET
SETB SCL
CLR P1.0
RLC A
DJNZ R0, LOOP; cycle 8 times to send 8 bits
AT24CXX low-power CMOS serial EEPROM of ATMEL Corporation, five kinds AT24C01A/02/04/08/16 such as the typical model, the storage capacity is 1024/2048/4096/8192/16384; is 128/256/512/1024/2048 bytes; using the voltage level of 5V, 2.7V, 2.5V, 1.8V; This paper describes the commonly used AT24C02 256 bytes of memory use; it has a wide operating voltage (2.5 ~ 5.5V), endurance (greater than 10 000 times), fast write speed (less than 10 ms) and so on.
the MORE: by ACALL and SUBR
SETB ACC.0; issued read command
INC DPTR
DJNZ R0, LOOP0,
MOVC A, @ A DPTR
SETB the SDA; if the last byte set A = 1
the CLR SCL
of RET
the SDATA: MOV R0, # 08H SETB the SCL,
the NOP
the NOP < br /> DELAY: NOP
LOOP2: SETB SCL
CLR SDA; the NOP
the NOP, hair began to signal
the NOP
MOV R2, # 08H; a Data 8
LJMP the START
the NOP
DJNZ R2, the LOOP
the NOP
the LOOP: MOV A, # 00H
DJNZ R7 AIN; consecutive write n bytes
JC the LOOP
the CLR the SCL
ORG 0000H
MOV C, the SDA
MOV A, R3,
the RLC A
NOP < br /> NOP
the NOP
CLR SCL
; R3 = 10.1 million (command 1010 devices 3 address read / write device address of a chip, 000)
of RET < br /> ORG register 0100H.

g) When the end of the write cycle, the WR bit is cleared.
f) set WR bit. This will begin erase cycle.
To write an EEPROM data storage unit must be in accordance with the following order:
d) “55″ write to NVMKEY. 2010 07 29
In addition 1 be allowed to the NVMCON the WREN bit must be set to enable write. Such a mechanism to prevent accidentally write data EEPROM due to unexpected code execution. Except when updating the EEPROM, the WREN bit should always maintain these bits clear. Hardware WREN bit. After the start of the write process, the WREN bit will not affect the current write cycle. Prohibit the WR position 1, unless the WREN bit is set. The WREN bit must be set in the previous one instruction. 1 WR and WREN bit is not set in the same instruction.
a) NVMCON register, select the word erase data EEPROM, and set WREN bit.
d) “AA” to write to NVMKEY.
3. a data word programmed into the data EEPROM.
2. Write data word into data EEPROM write latch.
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g) of the query NVMIF bit or wait for NVMIF interrupt.
1. erase the word of data EEPROM.
b) want to erase the word address is written NVMADR.
b) allows the NVM write complete interrupt (optional).
h) The WR bit is cleared when the erase cycle.
For each word, if the above sequence (the 0×55 write to NVMKEY to 0xAA write will be allowed to the NVMCON, and then set to 1 the WR bit is) not strictly comply, the write operation will not start. Strongly recommended that interrupts be disabled during this code is executed.
e) “AA” to write to NVMKEY.
a) NVMCON register, select the word programming data EEPROM, and set WREN bit.
c) “55″ write to NVMKEY.
write cycle is completed, the hardware WR bit is cleared, non-volatile memory write complete interrupt flag (NVMIF) is set to 1. The user can allow this to interrupt or poll this bit. NVMIF must be cleared by software.
e) set WR bit. This will begin the programming cycle.
c) enable NVM interrupt (optional).
f) to poll NVMIF, or wait for NVM.

He also noted that a visible trend of development of memory chips is the price will still drop in storage density continues to increase. This phenomenon is the driving force behind the progress of production and process technology improvements, and market the increase in demand for mass storage. On the other hand, the popular memory card such as SD card, memory chips, not only to package sale to *** piece sold. Storage products for sale *** piece is completely different from the package, you can not be a wafer cut into two, so the Book Storage Management *** piece is completely different concept. “
Memory chips the particularity, the price is no doubt that the machine manufacturers as purchasing the primary consideration, followed by the delivery period, product branding, design support services, after-sales service, product quality and performance. NAND and DRAM market supply channels, so the price is the most important factor in the ability to provide customers with complete design support for SRAM, the most important. “Li Baoen said,” If the distributor can provide a wider range of technical support, totalsolution and design services to help customers accelerate time to market. “
Tyco source The core product line is the Samsung memory, including DRAM, SRAM, FLASH, MCP, GRAPHICSMEMORY, MobileSDRAM MMCCard MASKROM EEPROM. Feng Wei said the company also offers product design support, stocking, loans and other services In addition to the fair price of the product.
the Jie agent brand, including Hynix SDRAM, DDR, DDR2, and the EON (norflash), Amic (SRAM), provides services including technical support, product compatibility and software upgrades.
Jie, Groups (SASGroup the) executive vice president AndyLau also said that the environmental impact of lead times, inventory, capital markets, from the point of view many of the major memory chip suppliers, the four quarters of this year, the memory chip market is still an oversupply. Does not appear on the market the new killer application, had been sent to thick to see the SSD market is unable to do so since the amount of 2008 will be a very difficult year for the memory chips.
Feng Wei, manufacturer when purchasing memory products, latest trends in the progress of the loan requirements. Long to keep a little bit of oversupply, manufacturers distributors lending requirements have increased significantly, but doing so adds a lot of manipulation of risk. In addition, supply sufficient to promote the delivery cycle reduced than in the past a lot of standardized products The delivery time is 1-2 weeks, “said Feng Wei.
of course, the memory chip market is bleak vision, but still some bright spots exciting. “And NANDFlash prices continued to drop, DRAM prices will stabilize.” Said Li Baoen “high-definition video, digital broadcasting, a new PC platform, as well as the development of next-generation networks will greatly stimulate the DRAM demand.” Industry giants will certainly not miss this market. Micron has said that the company has an agreement signed with South Asia (Nanya), the two companies will jointly establish a company called the United States and Asia (MeiYa) DRAM joint venture. It is reported that the United States and Asia will be the use of Micron and Nanya two production technology, the strength and experience. In addition to the United States and Asia, the agreement parties will jointly develop and share future technology. Qimonda (Qimonda) and Elpida have also signed a letter of intent to jointly develop a new generation of DRAM chips. Under the plan, the odd Qimonda will provide its key technology innovation BuriedWordline Elpida its advanced stack technology.
AndyLau also the price factor at the top. “The price is the most important factor, because it will directly affect the BOM capital TI agents,” he said. Porsche approach is to reduce capital, and through bulk purchases of the Design-in component solution to win customers.
machine manufacturers purchase memory chips, the primary factor: still the price
Despite the recent news of the NAND Flash prices are rising trend, but the market still can not get rid of the signs of the previous cold. The market research firm iSuppli recently the will NANDFlash growth speculation reduced by two-thirds. The sharp decline in memory chip prices spread to more than the original, play an important role of distributors in the memory industry chain has brought innumerable challenges, distributors generally thought that the memory chip market a high-risk industry.
with other products, memory chips are very sensitive to price, and the price all the time changing. Memory chip distribution market is capital-oriented business. Short product life cycles, supply and demand is usually a big difference. In addition, the memory chip market are high-volume market. “Said Li Baoen IR agent terminal sales price also there is no necessary connection with the production of capital, which led to the high-risk nature of the industry. “
memory chip distribution market: price, or price
memory chip market vision is not optimistic
memory chips the performance of the market haze, forcing many manufacturers to cut production or delayed Fab production plan. Micron (Micron) recently announced, will postpone its Singapore-based Fab original production plan, and its competitors Hynix (Hynix) also said that plans to cut NANDFlash production.
This article was provided by the components online information network components online “large-scale e-commerce site is hosted by the Shenzhen City, south Huang, in the Chinese electronics industry, the majority of engineers and technical decision makers, communications technology, microcontroller, consumer electronics, sensing and control, automotive electronics, power management, embedded systems, connectors and other hot areas have in-depth and detailed reports.
Samsung in China local authorized dealer the Tyco source limited liability company, general manager of Feng Wei thought, from the supply point of view, the current market has been the supplier of the rapid expansion of production in the past few years drag on, and a long period of oversupply state. For the first half of 2008, market conditions, product prices steady decline, the industry of look at recent prices can be stable, while for the second half of the market vision, Feng Wei said: “This is dependent on global economic trends, the United States credit and economic crisis will inhibit the demand for the semiconductor industry, plus the appreciation of the renminbi and other factors caused by the distribution companies operating capital to continue high, the second half of the international and domestic market situation is not optimistic. “
Sticky] 1X888888888 phone, number 9 and even selling 2.98 million – IC suppliers
In addition, of REALTEK agents MPS agent market, will some of the emerging memory chips, MRAM, PRAM, etc., although these chips is also developing , but can be expected that they will stimulate the memory chip market to further development.
Cytech agent memory chip product line, including Micron, LINEAR, agents IDT and the Catalyst products offered do not cover the SDRAM, DDR1, DDR2, DDR3, DRAMModule, NAND Flash, FlashMemoryCard, the SSD, the SRAM, of TCAM, RLDRAM PSRAM, MobileDRAM, and EEPROM. Cytech technology distribution market for memory chips, the main provider of both upwind service the First NANDFlash and DDR2 products have a very short delivery cycle, the second is in the design and development stage, and after-sales service, providing customers with a powerful on-site support.
He also said that, in addition to the price factor, machine manufacturers and usually consider with a certain stock, to meet the OEM expected inventory levels, and can quickly respond to price changes of partners. Storage business is like a gamble. “He said.
Aug 12, 2011 the McNair groups AndyLau
also held the same view. He said that the memory chip is not only very sensitive to price, and very easy to supply instability. “The price of flash memory chips every minute change, and the daily fluctuation of 20 to 30 percent. Samsung, Hynix made a big one, the market there will be a supply shortage and price increases, and vice versa falling prices, inventory redundant.
previous years, a serious price cold swept the entire field of memory chips, the memory chip market also affected by the unprecedented impact. Industry giant Samsung Electronics in 2007 fourth quarter financial report shows that the rapid decline in the uniform sales price of computer memory chips, the company profit fell 6.6 percent. DRAM maker Elpida (Elpida), announced its sales fell 34 percent, and the third-quarter net loss of $ 113.2 million. In Taiwan vendors ProMOS Technologies also announced prices and oversupply of memory chips of loss.
memory chip market oversupply causes prices fell sharply. For small and medium-sized memory chip maker, the need to reduce shipments in order to minimize the loss of profits, mainstream suppliers should invest more in R

Also commonly used to prevent illegal copies of software, hardware lock “above.
On the whole, large-capacity NAND flash memory chips, although addressing the operating time will be slightly longer, with page capacity to improve the effective transmission rate is still larger, high-capacity chips in line with market capacity, cost and performance trends in the demand. Increased data lines and increase the frequency, is the most effective way to improve performance, but because of the command, address occupied by the operating cycle, as well as some fixed operating time (such as the process of signal settling time, etc.), physical factors, they do not bring year on year performance improvement. Jul 23, 2010
the A12 ~ 29 pages addressing, can be understood as the row address. For convenience, the column address and row address is divided into two sets of transmission, rather than direct combination together a large group. Each group in the last cycle there will be a number of data lines without transmission of information. Did not make use of the data line is held low. NAND-type flash memory so-called “row address and column address” is not familiar with the definition in DRAM, SRAM, only a relatively convenient way. To facilitate understanding, we can chart of the above three-dimensional NAND type flash memory chips in the vertical direction to make a profile in this section to apply the two-dimensional “line”, “column” concept is relatively straightforward.
flash (Flash Memory)
EEPROM, generally used for the Plug and Play (Plug

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